Part number: K6T1008V2E-TB70000
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K6T1008V2E-TB70000 Component Specifications
General Information: The K6T1008V2E-TB70000 is a specialized component tailored for high-performance electronic applications, known for its reliability and efficiency in various digital systems. This component offers precise functionality and robust design suitable for demanding electronic environments.
Specifications
- Memory Type: Designed as a high-speed static random-access memory (SRAM) module, providing fast and efficient data storage and retrieval capabilities.
- Capacity: Offers a specific storage capacity of 1 Megabit (128K x 8) to accommodate data-intensive operations in electronic devices.
- Operating Voltage: Functions within a defined voltage range, ensuring stable and reliable performance in various electronic systems.
- Speed: Features a fast access time and data transfer rate, enhancing the overall performance of the electronic device.
Applications
- Electronic Devices: Suitable for use in a wide range of electronic devices, including computers, communication equipment, and consumer electronics requiring high-speed memory solutions.
- Embedded Systems: Ideal for embedded applications where rapid data processing and low power consumption are essential requirements.
- Industrial Control: Used in industrial control systems and automation applications where reliability and data integrity are critical.
Compliance
Industry Standards: The K6T1008V2E-TB70000 complies with industry standards and specifications, ensuring compatibility and performance in accordance with established electronic design guidelines.
Identification
The designation K6T1008V2E-TB70000 provides key information about the component's memory type, capacity, and operational characteristics, facilitating accurate integration and usage in electronic designs.
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