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Part number: IRF640N

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IRF640N Transistor Specifications

General Information: The IRF640N transistor is a high-power N-channel MOSFET designed for efficient switching applications in power electronics and motor control systems. Renowned for its robust design and performance, this transistor offers reliability and precision in demanding operational environments.

Specifications

  • Technology: Utilizes advanced N-channel MOSFET technology for high-speed switching and low on-resistance, optimizing power efficiency and thermal management.
  • Voltage Rating: Features a high voltage rating suitable for power supply circuits, motor drives, and other high-voltage applications, ensuring reliable operation under varying loads.
  • Current Handling: Capable of handling significant currents, making it ideal for power control and amplification tasks in industrial and automotive systems.
  • Package: Housed in a TO-220 package for efficient heat dissipation and easy mounting on circuit boards, enhancing overall reliability and performance.

Applications

  • Power Electronics: Commonly used in power inverters, voltage regulators, and switch-mode power supplies due to its high efficiency and robust performance characteristics.
  • Motor Control: Ideal for motor drive circuits in industrial automation, robotics, and electric vehicle systems, providing precise control and high power handling capabilities.
  • Audio Amplification: Suitable for audio amplifiers and speaker systems where high power output and low distortion are essential for quality sound reproduction.

Compliance

Industry Standards: The IRF640N transistor complies with industry standards for performance, reliability, and safety, ensuring consistent operation and compatibility with established design practices.

Identification

The designation IRF640N signifies key specifications of the transistor, including its technology, voltage and current ratings, and package type, enabling accurate identification and integration into diverse electronic circuits and systems.

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