Part #: 6MBI225U4-120
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6MBI225U4-120 Module Specifications
General Information: The 6MBI225U4-120 module is a high-power semiconductor device designed for efficient and reliable operation in power electronic systems. This module is renowned for its advanced technology and robust construction, making it a preferred choice for demanding industrial and commercial applications.
Specifications
- Technology: Utilizes state-of-the-art insulated gate bipolar transistor (IGBT) technology for high power handling capabilities and efficient switching performance.
- Voltage Rating: Features a voltage rating of 1200V, enabling it to withstand high voltage levels in power circuits without compromising performance.
- Current Rating: With a current rating of 225A, this module can handle substantial electrical currents, making it suitable for high-power applications.
- Configuration: Designed as a half-bridge configuration, providing flexibility in circuit design and enabling efficient power conversion.
Applications
- Power Electronics: Commonly used in motor drives, inverters, and power supplies where high power handling and efficient switching are essential.
- Renewable Energy: Ideal for use in solar inverters, wind turbine systems, and energy storage applications due to its reliability and performance under varying load conditions.
- Industrial Automation: Suitable for industrial automation equipment, robotics, and high-power control systems that require precise and reliable power management.
Compliance
Industry Standards: The 6MBI225U4-120 module complies with industry standards for power semiconductor devices, ensuring reliability, safety, and performance consistency in diverse applications.
Identification
The designation 6MBI225U4-120 provides detailed information about the module's electrical characteristics, voltage and current ratings, and configuration, facilitating accurate selection and integration into power electronic systems.
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