Part #: 2SA1930(Q,M)
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2SA1930(Q,M) Transistor Specifications
General Information: The 2SA1930(Q,M) transistor is a high-performance electronic component known for its reliability and efficiency in various circuit applications. This transistor is designed to deliver precise amplification and switching capabilities, making it a preferred choice for demanding electronic systems.
Specifications
- Type: Bipolar junction transistor (BJT) designed for high-frequency and high-power applications.
- Configuration: PNP (Positive-Negative-Positive) polarity for specific circuit requirements.
- Power Rating: Capable of handling significant power levels for robust performance.
- Frequency: Optimized for high-frequency operation, suitable for radio frequency (RF) applications.
Applications
- Amplification: Commonly used in audio amplifiers, power amplifiers, and RF circuits for signal amplification.
- Switching: Ideal for switching applications in power supplies, motor control circuits, and electronic control systems.
- RF Circuits: Well-suited for RF oscillator circuits, RF amplifiers, and other high-frequency applications.
Compliance
Industry Standards: The 2SA1930(Q,M) transistor complies with industry standards for electronic components, ensuring performance consistency and reliability in various electronic systems.
Identification
The designation 2SA1930(Q,M) provides specific information about the transistor's characteristics, including its type, configuration, and performance parameters, facilitating accurate selection and integration in electronic circuit designs.
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