Part #: 2N359
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2N359 Transistor Specifications
General Information: The 2N359 transistor is a semiconductor device widely used in electronic circuits for amplification, switching, and signal processing. Known for its reliability and performance, this transistor is a key component in various electronic applications.
Specifications
- Type: The 2N359 is a general-purpose NPN bipolar junction transistor (BJT) designed for low to medium power applications.
- Material: Constructed with semiconductor materials such as silicon to provide stable and consistent electrical characteristics.
- Maximum Ratings: Capable of handling specific voltage, current, and power ratings to ensure safe operation within defined limits.
- Gain: Exhibits moderate to high current gain (hFE) to amplify weak signals effectively.
Applications
- Amplification: Used in audio amplifiers, signal processing circuits, and radio frequency (RF) applications for signal amplification.
- Switching: Employed in switching circuits to control the flow of current in electronic devices and systems.
- Oscillation: Utilized in oscillator circuits to generate stable and precise frequencies for communication systems and timing applications.
Compliance
Industry Standards: The 2N359 transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for various electronic designs and applications.
Identification
The part number 2N359 provides specific information about the transistor's characteristics, including its type, material composition, and operational parameters, facilitating accurate selection and integration in electronic circuits.
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