Part #: 2N3055R
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2N3055R Transistor Specifications
General Information: The 2N3055R transistor is a high-power silicon NPN bipolar junction transistor designed for use in various electronic circuits and power applications. Renowned for its robustness and efficiency, this transistor is a popular choice for demanding electronic projects requiring reliable performance.
Specifications
- Technology: Utilizes silicon NPN bipolar junction technology for high power amplification and switching applications.
- Power Rating: Capable of handling significant power levels, making it suitable for power amplification and control tasks.
- Collector-Base Voltage: Designed to operate within specific voltage ranges to ensure proper functioning and reliability.
- Current Rating: Offers high current amplification capabilities, enabling efficient signal amplification and control.
Applications
- Power Electronics: Commonly used in power supplies, voltage regulators, and audio amplifiers due to its high power handling capacity.
- Switching Circuits: Ideal for switching applications in motor control, lighting systems, and industrial automation where rapid switching capabilities are required.
- Audio Amplification: Well-suited for audio amplifiers and speaker systems where high power output and efficiency are crucial.
Compliance
Industry Standards: The 2N3055R transistor complies with industry standards to ensure optimal performance, reliability, and safety in electronic applications.
Identification
The designation 2N3055R provides key information about the transistor's specifications, including its technology, power ratings, and applications, facilitating accurate identification and integration into electronic designs.
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