Part #: 2N3055NTE130
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2N3055NTE130 Transistor Specifications
General Information: The 2N3055NTE130 transistor is a high-power, silicon NPN epitaxial-base bipolar junction transistor (BJT) designed for use in power amplifier and switching applications. This transistor is known for its robust construction and ability to handle high currents and voltages.
Specifications
- Material: Utilizes silicon semiconductor material for enhanced performance and reliability in power applications.
- Power Rating: Capable of handling high power dissipation levels, making it suitable for power amplifier circuits and switching applications.
- Voltage and Current Ratings: Designed to operate at high voltages and currents, ensuring efficient power control and amplification.
- Frequency Response: Offers a wide frequency response range, enabling it to work effectively in audio amplifier and power switching circuits.
Applications
- Power Amplification: Commonly used in audio amplifier systems, power supplies, and RF amplifiers due to its high power handling capabilities.
- Switching Circuits: Ideal for applications requiring high-speed switching such as motor control, inverters, and voltage regulators.
- Industrial Electronics: Found in industrial equipment, power controllers, and high-power electronic systems for efficient power management.
Compliance
Industry Standards: The 2N3055NTE130 transistor complies with relevant industry standards for performance, reliability, and safety in power applications, ensuring consistent and dependable operation.
Identification
The code 2N3055NTE130 provides specific information about the transistor's characteristics, power ratings, and intended applications, aiding in accurate identification and selection for electronic circuit designs and power systems.
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