Part #: 2N3055MP
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2N3055MP Transistor Specifications
General Information: The 2N3055MP transistor is a high-power, silicon NPN epitaxial-base bipolar junction transistor (BJT) designed for use in various electronic circuits and power applications. Renowned for its robustness and reliability, this transistor is a popular choice for amplification and switching purposes.
Specifications
- Technology: Utilizes silicon NPN epitaxial-base technology for efficient performance and high current gain.
- Power Rating: Capable of handling significant power levels with a maximum power dissipation rating, making it suitable for power amplification tasks.
- Frequency: Operates effectively across a wide frequency range, enabling versatile applications in audio amplifiers, power supplies, and motor control circuits.
- Voltage and Current Ratings: Features high voltage and current ratings to accommodate demanding circuit requirements.
Applications
- Power Amplification: Commonly used in audio amplifiers, voltage regulators, and power supplies due to its high power handling capabilities.
- Switching: Suitable for switching applications in motor control circuits, inverters, and other power electronics systems.
- Industrial Systems: Found in industrial automation, power distribution, and control systems where reliability and efficiency are crucial.
Compliance
Industry Standards: The 2N3055MP transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of electronic applications.
Identification
The designation 2N3055MP provides key information about the transistor's type, characteristics, and intended applications, facilitating easy identification and integration into electronic designs and circuits.
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