Part #: 2N3055LF
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2N3055LF Transistor Specifications
General Information: The 2N3055LF transistor is a high-power, silicon NPN bipolar junction transistor (BJT) designed for use in various electronic circuits and power applications. Renowned for its robustness and efficiency, this transistor is a popular choice for demanding electronic projects.
Specifications
- Technology: Utilizes silicon NPN BJT technology for high power amplification and switching applications.
- Power Rating: Capable of handling significant power levels, making it suitable for power amplification and control circuits.
- Frequency: Operates efficiently across a wide frequency range, enabling versatile use in different electronic systems.
- Voltage and Current Ratings: Features high voltage and current ratings to support demanding applications with reliability.
Applications
- Power Amplification: Commonly used in audio amplifiers, power supplies, and RF transmitters requiring high power handling capabilities.
- Switching Circuits: Ideal for switching applications in power control circuits, motor control systems, and voltage regulators.
- Industrial Electronics: Employed in industrial equipment, automation systems, and power management units for efficient operation.
Compliance
Industry Standards: The 2N3055LF transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of electronic applications.
Identification
The code 2N3055LF denotes specific characteristics of the transistor, including its power rating, technology, and intended applications, facilitating easy identification and integration into electronic designs.
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