Part #: 2N3055JTX
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2N3055JTX Transistor Specifications
General Information: The 2N3055JTX transistor is a high-power, silicon NPN bipolar junction transistor (BJT) known for its robust performance and reliability in various electronic applications. This transistor is designed to handle high current and power levels, making it suitable for power amplification and switching circuits.
Specifications
- Material: Constructed from silicon, a semiconductor material known for its stability and efficiency in electronic devices.
- Type: NPN (Negative-Positive-Negative) bipolar junction transistor, providing amplification and switching capabilities.
- Power Rating: Capable of handling high power levels, typically in the range of tens of watts, making it ideal for power applications.
- Frequency: Suitable for medium to high-frequency operations, offering versatility in various circuit designs.
Applications
- Power Amplification: Commonly used in audio amplifiers, power supplies, and voltage regulators due to its high power handling capabilities.
- Switching Circuits: Ideal for switching applications in power electronics, motor control, and voltage regulation circuits.
- Industrial Electronics: Found in industrial control systems, inverters, and high-power equipment requiring efficient amplification and switching.
Compliance
Industry Standards: The 2N3055JTX transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of electronic applications.
Identification
The designation 2N3055JTX provides specific information about the transistor's type, characteristics, and performance parameters, aiding in its identification and selection for electronic circuit design and implementation.
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