Part #: 2N3055JAN
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2N3055JAN Transistor Specifications
General Information: The 2N3055JAN transistor is a high-power, silicon NPN device designed for use in various electronic applications. Known for its robust construction and reliability, this transistor is widely used in power amplification circuits and voltage regulator designs.
Specifications
- Material: Fabricated from silicon material to provide high electrical conductivity and thermal stability during operation.
- Power Rating: Capable of handling significant power levels, making it suitable for power control and amplification tasks.
- Operating Voltage: Designed to operate within specific voltage ranges to ensure optimal performance and reliability.
- Frequency: Offers a wide frequency response, enabling it to work efficiently in various signal processing applications.
Applications
- Power Amplification: Commonly used in audio amplifiers, power supplies, and RF transmitters due to its high-power handling capabilities.
- Voltage Regulation: Employed in voltage regulator circuits to stabilize and control output voltages in power supply units.
- Switching Circuits: Utilized in switching applications where fast response times and high current handling are required.
Compliance
Industry Standards: The 2N3055JAN transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of electronic designs and systems.
Identification
The designation 2N3055JAN provides specific information about the transistor's characteristics, including its power rating, voltage handling capabilities, and intended applications, facilitating accurate selection and integration into electronic circuits.
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