Part #: 2N3055J
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2N3055J Transistor Specifications
General Information: The 2N3055J transistor is a high-power, silicon NPN bipolar junction transistor (BJT) commonly used in power amplification and switching applications. Renowned for its robust design and reliable performance, this transistor is a popular choice in various electronic circuits.
Specifications
- Type: NPN Bipolar Junction Transistor (BJT)
- Material: Silicon construction for high power handling capabilities and thermal stability.
- Voltage Rating: Designed to handle moderate to high voltage levels, making it suitable for power applications.
- Current Rating: Capable of handling significant current levels, ideal for power amplification tasks.
- Frequency: Suitable for medium to high-frequency operations, depending on the circuit design.
Applications
- Power Amplification: Widely used in audio amplifiers, power supplies, and RF amplification circuits.
- Switching: Effective for switching applications in power control circuits and motor control systems.
- Voltage Regulation: Employed in voltage regulator circuits to maintain stable output voltages.
Compliance
Industry Standards: The 2N3055J transistor complies with industry standards for performance and reliability in power electronics applications, ensuring consistent and safe operation within specified parameters.
Identification
The designation 2N3055J provides key information about the transistor's type, material, and performance characteristics, aiding in accurate identification and integration into electronic designs requiring high-power handling capabilities.
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