Part #: 2N3055H
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2N3055H Transistor Specifications
General Information: The 2N3055H transistor is a high-power, silicon NPN bipolar junction transistor (BJT) known for its robustness and efficiency in various electronic applications. This transistor is widely used in power amplification and switching circuits due to its reliability and performance.
Specifications
- Technology: Utilizes silicon NPN BJT technology for high-power applications, providing efficient amplification and switching capabilities.
- Power Rating: Designed to handle high power levels, making it suitable for applications requiring significant power amplification.
- Frequency: Capable of operating at moderate to high frequencies, offering versatility in different circuit configurations.
- Voltage and Current Ratings: Provides specific voltage and current handling capabilities to ensure reliable performance under varying load conditions.
Applications
- Power Amplification: Commonly used in audio amplifiers, power supplies, and RF amplification circuits due to its high-power handling capabilities.
- Switching Circuits: Ideal for switching applications in power supplies, motor control, and voltage regulation circuits where efficient power switching is essential.
- Industrial Electronics: Found in industrial equipment, instrumentation, and control systems requiring reliable and high-power transistor solutions.
Compliance
Industry Standards: The 2N3055H transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of electronic applications.
Identification
The designation 2N3055H provides detailed information about the transistor's characteristics, including its technology, power ratings, and intended applications, facilitating accurate selection and integration into electronic designs.
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