Part #: 2N3055AG
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2N3055AG Transistor Specifications
General Information: The 2N3055AG transistor is a high-power, silicon NPN bipolar junction transistor (BJT) known for its robust performance and reliability in various electronic applications. This transistor is designed to handle high currents and voltages, making it ideal for power amplification and switching applications.
Specifications
- Type: NPN Bipolar Junction Transistor (BJT)
- Material: Silicon construction for high power handling capabilities and thermal efficiency.
- Maximum Ratings: Capable of handling high collector current and collector-emitter voltage for power applications.
- Package: Typically housed in a TO-3 metal can package for efficient heat dissipation.
Applications
- Power Amplification: Commonly used in audio amplifiers, power supplies, and high-power circuits requiring robust transistor performance.
- Switching: Suitable for switching applications in power control circuits, motor control, and voltage regulation systems.
- Industrial Use: Found in industrial equipment, power converters, and high-power electronic systems.
Compliance
Industry Standards: The 2N3055AG transistor complies with industry standards for performance, reliability, and electrical characteristics, ensuring consistent and safe operation in electronic circuits.
Identification
The code 2N3055AG denotes specific details about the transistor, including its type, material composition, and maximum ratings, enabling accurate identification and integration into electronic designs.
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