Part #: 2N3055A-R
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2N3055A-R Transistor Specifications
General Information: The 2N3055A-R transistor is a high-power, silicon NPN bipolar junction transistor (BJT) designed for use in a variety of electronic circuits and power applications. Renowned for its robust construction and reliability, this transistor is a popular choice for demanding industrial and automotive systems.
Specifications
- Technology: Utilizes silicon NPN BJT technology to provide high power amplification and switching capabilities.
- Power Rating: Capable of handling high power levels, making it suitable for power amplification and control applications.
- Voltage and Current Ratings: Designed to operate at specific voltage and current levels to ensure optimal performance and reliability.
- Package Type: Typically housed in a TO-3 metal can package for efficient heat dissipation and mechanical robustness.
Applications
- Power Amplification: Commonly used in audio amplifiers, power supplies, and motor control circuits due to its high power handling capabilities.
- Switching Applications: Suitable for switching high currents in industrial equipment, automotive systems, and power converters.
- Voltage Regulation: Employed in voltage regulator circuits to ensure stable and regulated power output.
Compliance
Industry Standards: The 2N3055A-R transistor complies with relevant industry standards for performance, reliability, and safety, meeting the stringent requirements for electronic components in various applications.
Identification
The designation 2N3055A-R provides specific information about the transistor's characteristics, including its power ratings, technology, and package type, facilitating accurate identification and integration into electronic designs and systems.
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