Part #: 2N3055/B
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2N3055/B Transistor Specifications
General Information: The 2N3055/B transistor is a widely used power transistor known for its robust performance and reliability in various electronic circuits and power applications. This component is valued for its high power handling capabilities and efficiency.
Specifications
- Type: Power bipolar junction transistor (BJT) designed for high-power amplification and switching applications.
- Material: Typically made from silicon with appropriate doping to enhance conductivity and power handling capacity.
- Power Rating: Capable of handling significant power levels, making it suitable for power supply units, amplifiers, and voltage regulators.
- Operating Voltage: Designed to operate at moderate to high voltages, ensuring compatibility with various power circuit configurations.
Applications
- Power Electronics: Commonly used in power supplies, inverters, motor control circuits, and audio amplifiers due to its high power handling capabilities.
- Industrial Systems: Found in industrial automation, control systems, and high-power equipment where reliability and efficiency are crucial.
- Renewable Energy: Utilized in solar inverters and wind turbine control systems to manage and regulate power efficiently.
Compliance
Industry Standards: The 2N3055/B transistor complies with industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of applications.
Identification
The designation 2N3055/B provides specific information about the transistor's characteristics, allowing for easy identification and integration into electronic designs and systems.
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