Part #: 2N3055-JAN
|
|  |
2N3055-JAN Transistor Specifications
General Information: The 2N3055-JAN transistor is a high-power, silicon NPN bipolar junction transistor designed for robust performance in various electronic applications. Known for its reliability and efficiency, this transistor is commonly used in power amplification circuits and voltage regulator applications.
Specifications
- Material: Constructed with silicon semiconductor material for high power-handling capabilities and thermal stability.
- Type: NPN (Negative-Positive-Negative) bipolar junction transistor for amplification and switching functions.
- Power Rating: Capable of handling high power dissipation levels, making it suitable for power applications.
- Frequency: Operates efficiently at medium to high frequencies, enabling it to be used in various electronic circuits.
Applications
- Power Amplification: Ideal for audio amplifiers, power supplies, and RF amplification due to its high power capabilities.
- Voltage Regulation: Commonly used in voltage regulator circuits to maintain stable output voltages under varying load conditions.
- Switching: Suitable for switching applications in power electronics and motor control systems.
Compliance
Industry Standards: The 2N3055-JAN transistor complies with relevant industry standards for performance, reliability, and safety, ensuring its suitability for a wide range of electronic applications.
Identification
The designation 2N3055-JAN provides specific information about the transistor's characteristics, including its power rating, type, and intended applications, facilitating accurate selection and integration into electronic designs.
All parts are inspected before shipping to ensure that you receive components that meet and exceed our quality assurance guidelines. We screen against counterfeit parts. Our mission is to ensure you receive the highest quality parts.