Part #: 2N3055-
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2N3055 Transistor Specifications
General Information: The 2N3055 transistor is a widely used power transistor known for its reliability and robust performance in various electronic applications. This transistor is designed to handle high power levels and is commonly utilized in power amplifiers, voltage regulators, and other circuits requiring high-current switching capabilities.
Specifications
- Type: Power Bipolar Junction Transistor (BJT)
- Maximum Power Dissipation: Capable of dissipating significant power levels to ensure stable operation under high load conditions.
- Collector-Base Voltage (VCEO): Designed to withstand high voltage levels for reliable performance in power circuits.
- Collector Current (IC): Capable of handling substantial current levels, making it suitable for power applications.
- Package: Typically available in a TO-3 metal can package for efficient heat dissipation.
Applications
- Power Amplifiers: Commonly used in audio amplifiers and high-power amplification systems.
- Voltage Regulators: Suitable for voltage regulation circuits in power supplies and electronic systems.
- Switching Circuits: Utilized in applications requiring high-current switching capabilities.
Compliance
Industry Standards: The 2N3055 transistor complies with relevant industry standards for performance and reliability, ensuring its suitability for a wide range of electronic applications.
Identification
The part number 2N3055 provides key information about the transistor's specifications, including its power handling capabilities, voltage ratings, and package type, facilitating accurate selection and integration in electronic designs.
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