Part #: 2N3019*
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2N3019* Component Specifications
General Information: The 2N3019* is a versatile semiconductor device known for its reliability and performance in electronic circuits and systems. This component is designed to provide precise control and amplification of electrical signals in various applications.
Specifications
- Type: The 2N3019* is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification tasks.
- Package: Available in various package types such as TO-39, TO-18, or TO-92, offering flexibility for different mounting and assembly requirements.
- Voltage and Current Ratings: Capable of handling moderate voltage and current levels, making it suitable for low to medium power applications.
- Frequency: Exhibits good high-frequency performance, enabling its use in applications requiring signal amplification in radio frequency (RF) circuits.
Applications
- Signal Amplification: Commonly used in audio amplifiers, signal processing circuits, and RF applications due to its amplification capabilities.
- Switching Circuits: Suitable for switching applications in digital and analog circuits where fast response times and reliable operation are essential.
- Control Systems: Integrated into control circuits for regulating power, voltage, or current in various electronic systems.
Compliance
Industry Standards: The 2N3019* complies with industry standards for semiconductor devices, ensuring consistent performance and reliability in accordance with established guidelines.
Identification
The designation 2N3019* provides key information about the transistor's specifications, including its type, package style, and performance characteristics, facilitating accurate selection and integration into electronic designs.
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