Part #: 2N2907
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2N2907 Transistor Specifications
General Information: The 2N2907 transistor is a versatile semiconductor device commonly used in electronic circuits for amplification, switching, and signal processing. Known for its reliability and performance consistency, this transistor is a popular choice in various electronic applications.
Specifications
- Type: PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching tasks.
- Maximum Power Dissipation: Capable of dissipating power up to a specified limit to prevent overheating and ensure operational stability.
- Collector-Base Voltage (VCBO): The maximum voltage the transistor can withstand between the collector and base terminals.
- Collector-Emitter Voltage (VCEO): The maximum voltage rating for the collector-emitter junction.
- Current Gain (hFE): The current gain factor specifying the amplification capability of the transistor.
Applications
- Amplification: Used in audio amplifiers, signal processing circuits, and voltage regulators to amplify weak signals with minimal distortion.
- Switching: Employed in electronic switches, relay drivers, and motor control circuits for efficient on/off control of current flow.
- Oscillator Circuits: Utilized in oscillator circuits for generating stable and precise frequency signals in communication systems and timing devices.
Compliance
Industry Standards: The 2N2907 transistor complies with industry standards for performance, reliability, and electrical characteristics, ensuring consistent operation in diverse electronic applications.
Identification
The part number 2N2907 provides specific details about the transistor's type, electrical ratings, and applications, facilitating accurate selection and integration into electronic designs.
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