Part #: 2N2369JAN
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2N2369JAN Transistor Specifications
General Information: The 2N2369JAN transistor is a high-quality semiconductor device known for its reliability and performance in electronic circuits. This transistor is designed to provide efficient amplification and switching capabilities in various applications.
Specifications
- Type: Bipolar junction transistor (BJT) known for its low noise and high-frequency performance.
- Material: Made from semiconductor materials like silicon for optimal electrical properties and durability.
- Package: Typically housed in a TO-18 metal can package for easy mounting and heat dissipation.
- Max Power Dissipation: Capable of handling power dissipation levels suitable for medium-power applications.
- Max Voltage and Current Ratings: Designed to operate within specific voltage and current limits for reliable performance.
Applications
- Amplification: Commonly used in audio amplifiers, signal processing circuits, and RF applications due to its high-frequency capabilities.
- Switching: Suitable for switching applications in electronic devices and systems where fast response times are crucial.
- Oscillator Circuits: Utilized in oscillator circuits for generating stable and precise frequencies in communication systems.
Compliance
Industry Standards: The 2N2369JAN transistor complies with industry standards for performance, quality, and reliability, ensuring consistency in its application across various electronic systems.
Identification
The designation 2N2369JAN provides specific information about the transistor's characteristics, making it easy to identify and incorporate into circuit designs for optimal functionality and performance.
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