Part #: 2N2219JAN
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2N2219JAN Transistor Specifications
General Information: The 2N2219JAN transistor is a high-performance semiconductor device known for its reliability and versatility in electronic circuits. This component is designed to deliver consistent performance in a wide range of applications, making it a popular choice among engineers and electronics enthusiasts.
Specifications
- Type: Bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.
- Package: Available in various packaging options such as TO-39 metal can or surface-mount packages for ease of integration.
- Power Rating: Capable of handling moderate power levels, suitable for low to medium power applications.
- Frequency: Offers good high-frequency performance, making it suitable for RF (Radio Frequency) applications.
Applications
- Amplification: Commonly used in audio amplifiers, signal amplification circuits, and RF amplifiers due to its low noise and high gain characteristics.
- Switching: Ideal for switching applications in electronic circuits where fast response times and moderate power handling are required.
- Oscillator Circuits: Utilized in oscillator circuits for generating stable oscillations in radio transmitters, signal generators, and other electronic devices.
Compliance
Industry Standards: The 2N2219JAN transistor complies with industry standards for performance, reliability, and safety, ensuring consistent quality and compatibility with electronic systems.
Identification
The designation 2N2219JAN provides specific information about the transistor's characteristics, including its type, packaging, power rating, and frequency capabilities, facilitating accurate selection and integration in electronic designs.
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