Part #: 2N2012
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2N2012 Component Specifications
General Information: The 2N2012 is a discrete semiconductor component known for its reliability and performance in electronic circuits and systems. This component is designed to provide precise amplification and switching functions in various applications, making it a popular choice among engineers and hobbyists.
Specifications
- Type: The 2N2012 is a bipolar junction transistor (BJT) designed for specific voltage and current requirements, offering versatility in circuit design.
- Material: Constructed from semiconductor materials with high conductivity and reliability to ensure stable operation over a wide range of conditions.
- Package: Available in different packaging options such as TO-39 metal can or TO-18 metal can, providing flexibility for various mounting and thermal requirements.
- Operating Conditions: Suitable for moderate power applications with voltage and current ratings that make it ideal for signal amplification and switching tasks.
Applications
- Amplification: Commonly used in audio amplifiers, signal processing circuits, and radio frequency (RF) applications due to its amplification capabilities.
- Switching: Employed in switching circuits for on/off control functions in electronic devices, power supplies, and automation systems.
- Industrial Electronics: Found in industrial control systems, instrumentation, and motor drive circuits where reliable performance is essential.
Compliance
Industry Standards: The 2N2012 complies with industry standards for semiconductor components, ensuring quality, performance, and reliability in electronic systems.
Identification
The part number 2N2012 specifies the unique characteristics of this semiconductor component, allowing for easy identification and integration into circuit designs for a wide range of electronic applications.
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