Part #: 2N1200
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2N1200 Component Specifications
General Information: The 2N1200 is a discrete semiconductor device known for its reliability and performance in electronic circuits. This component is designed to provide precise control and amplification functions in various applications, making it a popular choice among engineers and hobbyists.
Specifications
- Type: The 2N1200 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification tasks.
- Package: Typically housed in a TO-5 metal can package, providing thermal stability and mechanical protection.
- Voltage and Current Ratings: Capable of handling moderate voltage and current levels suitable for low to medium power applications.
- Frequency: Offers good high-frequency response, making it suitable for applications requiring signal amplification in the audio and RF spectrum.
- Operating Temperature: Designed to operate within specified temperature ranges to ensure optimal performance under varying environmental conditions.
Applications
- Switching Circuits: Commonly used in electronic switches, relay drivers, and other applications requiring control of electrical signals.
- Amplification: Suitable for audio amplifiers, signal processing circuits, and RF amplification stages where controlled gain is essential.
- Power Control: Used in power supplies, voltage regulators, and motor control circuits to manage power flow and distribution.
Compliance
Industry Standards: The 2N1200 complies with industry standards for semiconductor devices, ensuring performance consistency and reliability in diverse electronic systems.
Identification
The part number 2N1200 provides specific information about the transistor's characteristics, enabling easy identification and integration into electronic designs and projects.
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