Part #: 2MBI200U4H-170
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2MBI200U4H-170 Component Specifications
General Information: The 2MBI200U4H-170 is a high-power semiconductor module designed for use in industrial and power electronics applications. This component is renowned for its robust design and exceptional performance in demanding environments, making it a preferred choice for high-power systems.
Specifications
- Technology: Utilizes advanced insulated gate bipolar transistor (IGBT) technology for efficient power control and high switching speeds.
- Voltage Rating: Rated for high voltage applications, providing reliable operation in systems requiring substantial power handling capabilities.
- Current Capacity: Designed to handle significant current levels, making it suitable for high-power applications where efficiency and reliability are crucial.
- Temperature: Operating temperature range ensures stable performance even in challenging thermal conditions, maintaining system integrity.
Applications
- Power Electronics: Widely used in inverters, motor drives, and power supplies where high efficiency and precise control are essential.
- Industrial Automation: Ideal for industrial automation systems requiring high-power switching capabilities and reliable performance.
- Renewable Energy: Commonly employed in solar inverters and wind turbine systems to regulate power flow and ensure optimal energy conversion.
Compliance
Industry Standards: The 2MBI200U4H-170 complies with industry standards for power semiconductor modules, meeting stringent requirements for performance, safety, and reliability in industrial applications.
Identification
The designation 2MBI200U4H-170 provides detailed information about the module's specifications, including its power handling capabilities, technology, and suitability for high-power applications, facilitating accurate identification and integration into power electronic systems.
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