Part #: 2MBI100N-060IGBT
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2MBI100N-060IGBT Component Specifications
General Information: The 2MBI100N-060IGBT is a high-power insulated-gate bipolar transistor (IGBT) designed for use in industrial and power electronic applications. This component is renowned for its robust construction and efficient performance, making it an excellent choice for high-power systems requiring reliability and precision.
Specifications
- Technology: Utilizes advanced IGBT technology to provide high switching speeds and low on-state voltage drops, optimizing efficiency and performance.
- Current Rating: Capable of handling high currents up to 100A, making it suitable for power electronics applications requiring substantial power handling capabilities.
- Voltage Rating: Designed to withstand voltages up to 600V, ensuring reliable operation in high-voltage circuits and systems.
- Package Type: Housed in a robust and thermally efficient module for effective heat dissipation and enhanced reliability under high-power conditions.
Applications
- Power Electronics: Ideal for use in motor drives, inverters, power supplies, and other high-power applications where efficient power switching is crucial.
- Industrial Automation: Commonly employed in industrial automation systems, welding equipment, and renewable energy systems for reliable power control.
- Renewable Energy: Used in solar inverters, wind turbine converters, and energy storage systems to manage and convert power efficiently.
Compliance
Industry Standards: The 2MBI100N-060IGBT complies with industry standards for power semiconductor devices, ensuring adherence to safety, performance, and quality requirements for industrial and commercial applications.
Identification
The designation 2MBI100N-060IGBT provides detailed information about the transistor's specifications, including its current and voltage ratings, technology, and package type, facilitating accurate identification and integration into power electronic systems.
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